| PART |
Description |
Maker |
| TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V，夹断电.18AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
| VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω，N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS（击穿电40伏，10Ω沟道增强型垂直的DMOS结构场效应管
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??)
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
| STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
意法半导
STMicro
|
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
| MGSF3455XT1 MGSF3455XT1_D ON1912 ON1911 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
P-CHANNEL ENHANCEMENT?ODE
From old datasheet system
|
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| ZXMP3A16DN8TC ZXMP3A16DN8 ZXMP3A16DN8TA |
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET 双P沟道增强型MOSFET0V
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET 4200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
